Sub-nT AMR sensors based on low noise La0.7Sr0.3MnO3 thin films for neuronal activity measurement - GREYC electronique Accéder directement au contenu
Poster De Conférence Année : 2019

Sub-nT AMR sensors based on low noise La0.7Sr0.3MnO3 thin films for neuronal activity measurement

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hal-02523176 , version 1 (28-03-2020)

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  • HAL Id : hal-02523176 , version 1

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Luiz Guiherme Enger, Olivier Rousseau, Stéphane Flament, Bruno Guillet, Marc Lam Chok Sing, et al.. Sub-nT AMR sensors based on low noise La0.7Sr0.3MnO3 thin films for neuronal activity measurement. Magnetic frontiers - Magnetic Sensors, Jun 2019, Lisbonne, Portugal. ⟨hal-02523176⟩
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