Electrical and mechanical characterisation of Si/Al ohmic contacts on diamond
Résumé
A new ohmic contact technology on diamond with low resistivity is presented. A Si/AI metallisation is used and leads to a 7 10-6 A.cm2 specific contact resistivity, measured by the transfer length method. Comparison is made between this technology and the Ti/Pt/Au traditional technology. Both technologies show very good electrical, thermal and mechanical characteristics.
| Origine | Fichiers produits par l'(les) auteur(s) |
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