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Article Dans Une Revue physica status solidi (c) Année : 2010

The microstructure and properties of InN layers

Résumé

A series of InN layers grown by different techniques has been investigated by transmission electron microscopy, photoluminescence and Raman spectroscopy. The polarity is shown to be determined by the underlying GaN template. In these In polar layers, the c-screw dislocations density is low and that of a-type dislocations is in the high-109 cm-2 range. The dislocation density tends to decrease towards the surface. Along the first 0.5 μm, and particularly in the samples grown by hydride vapour epitaxy, we observe a large number of stacking faults, which probably contribute to the dislocation density reduction. The optical band gap in MBE and MOVPE samples is between 0.6 and 0.7 eV, but that of the HVPE templates is above 1 eV. Estimations from Raman data show that this behaviour correlates well with the residual carrier concentration.
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Dates et versions

hal-00483611 , version 1 (14-05-2010)

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  • HAL Id : hal-00483611 , version 1

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Pierre Ruterana, A. L. Syrkin, E. Monroy, E. Valcheva, K. Kirilov. The microstructure and properties of InN layers. physica status solidi (c), 2010, 7 (5), pp.1301-1304. ⟨hal-00483611⟩
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