Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires - INAC-SP2M Access content directly
Journal Articles Applied Physics Letters Year : 2013

Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires

Moïra Hocevar
Le Thuy Thanh Giang
  • Function : Author
Rudeesun Songmuang
Martien den Hertog
Lucien Besombes
Joël Bleuse

Abstract

We observe a systematic red shift of the band-edge of passivated GaAs/Al0.35Ga0.65As core-shell nanowires with increasing shell thickness up to 100 nm. The shift is detected both in emission and absorption experiments, reaching values up to 14 meV for the thickest shell nanowires. Part of this red shift is accounted for by the small tensile strain imposed to the GaAs core by the AlGaAs shell, in line with theoretical calculations. An additional contribution to this red shift arises from axial piezoelectric fields which develop inside the nanowire core due to Al fluctuations in the shell.
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Dates and versions

hal-00935527 , version 1 (30-01-2014)

Identifiers

Cite

Moïra Hocevar, Le Thuy Thanh Giang, Rudeesun Songmuang, Martien den Hertog, Lucien Besombes, et al.. Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires. Applied Physics Letters, 2013, 102 (19), pp.191103. ⟨10.1063/1.4803685⟩. ⟨hal-00935527⟩
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